document number: 81962 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 23-jul-09 1 silicon pin photodiode VEMD2000X01, vemd2020x01 vishay semiconductors description VEMD2000X01 and vemd2020x01 are high speed and high sensitive pin photodiodes in a miniature surface mount package (smd) with dome lens and daylight blocking filter. filter is matched with ir emit ters operating at wavelength of 830 nm to 950 nm. the photo sensitive area of the chip is 0.23 mm 2 . features ? package type: surface mount ? package form: gw, rgw ? dimensions (l x w x h in mm): 2.3 x 2.3 x 2.8 ? aec-q101 qualified ? high radiant sensitivity ? daylight blocking filter matched with 830 nm to 950 nm ir emitters ? fast response times ? angle of half sensitivity: ? = 15 ? package matched with ir emitter series vsmb2000x01 ? floor life: 4 weeks, msl 2a, acc. j-std-020 ? lead (pb)-free reflow soldering ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications applications ? high speed photo detector ? infrared remote control ? infrared data transmission ? photo interrupters ? shaft encoders note test conditions see table ?basic characteristics? note moq: minimum order quantity note t amb = 25 c, unless otherwise specified 2156 8 -1 v emd2020x01 v emd2000x01 product summary component i ra (a) ? (deg) 0.5 (nm) VEMD2000X01 12 15 750 to 1050 vemd2020x01 12 15 750 to 1050 ordering information ordering code packaging remarks package form VEMD2000X01 tape and reel moq: 6000 pcs, 6000 pcs/reel reverse gullwing vemd2020x01 tape and reel moq: 6000 pcs, 6000 pcs/reel gullwing absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 60 v power dissipation t amb 25 c p v 215 mw junction temperature t j 100 c operating temperature range t amb - 40 to + 100 c storage temperature range t stg - 40 to + 100 c soldering temperature acc. refl ow solder profile fig. 7 t sd 260 c thermal resistance juncti on/ambient acc. j-std-051 r thja 250 k/w
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81962 2 rev. 1.1, 23-jul-09 VEMD2000X01, vemd2020x01 vishay semiconductors silicon pin photodiode note t amb = 25 c, unless otherwise specified basic characteristics t amb = 25 c, unless otherwise specified fig. 1 - reverse dark current vs. ambient temperature fig. 2 - relative reverse light current vs. ambient temperature basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 50 ma v f 1v breakdown voltage i r = 100 a, e = 0 v (br) 32 v reverse dark current v r = 10 v, e = 0 i ro 110na diode capacitance v r = 0 v, f = 1 mhz, e = 0 c d 4pf v r = 5 v, f = 1 mhz, e = 0 c d 1.3 pf open circuit voltage e e = 1 mw/cm 2 , = 950 nm v o 350 mv temperature coefficient of v o e e = 1 mw/cm 2 , = 950 nm tk vo - 2.6 mv/k short circuit current e e = 1 mw/cm 2 , = 950 nm i k 11 a temperature coefficient of i k e e = 1 mw/cm 2 , = 950 nm tk ik 0.1 %/k reverse light current e e = 1 mw/cm 2 , = 950 nm, v r = 5 v i ra 512 a angle of half sensitivity ? 15 deg wavelength of peak sensitivity p 940 nm range of spectral bandwidth 0.5 750 to 1050 nm rise time v r = 10 v, r l = 1 k , = 820 nm t r 100 ns fall time v r = 10 v, r l = 1 k , = 820 nm t f 100 ns 20 1 10 100 1000 i ro - re v erse dark c u rrent (na) t am b - am b ient temperat u re (c) 94 8 427 v r = 10 v 100 8 0 60 40 0.6 0. 8 1.0 1.2 1.4 i ra, rel - relati v e re v erse light c u rrent t am b - am b ient temperat u re (c) 94 8 416 v r = 5 v = 950 nm 0 100 8 0 60 40 20
document number: 81962 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 23-jul-09 3 VEMD2000X01, vemd2020x01 silicon pin photodiode vishay semiconductors fig. 3 - reverse light current vs. irradiance fig. 4 - diode capacitance vs. reverse voltage fig. 5 - relative spectral sensitivity vs. wavelength fig. 6 - relative radiant intensity vs. angular displacement 0.1 1.0 10 100 0.01 i ra - re v erse light c u rrent ( a) e e - irradiance (m w /cm2) 16055 v ce = 5 v = 950 nm 10 1 0.1 0 2 4 6 8 0.1 c d - diode capacitance (pf) v r - re v erse v oltage ( v ) 94 8 430 e = 0 f = 1 mhz 100 10 1 0 0.2 0.4 0.6 0. 8 1.0 1.2 600 700 8 00 900 1000 1100 21554 - w a v elength (nm) s ( ) rel - relati v e spectral sensiti v ity s rel - relati v e sensiti v ity 94 8 24 8 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 0 0.2 0.4 ? - ang u lar displacement
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81962 4 rev. 1.1, 23-jul-09 VEMD2000X01, vemd2020x01 vishay semiconductors silicon pin photodiode reflow solder profile fig. 7 - lead (pb)-free reflow solder profile acc. j-std-020d drypack devices are packed in moisture barrier bags (mbb) to prevent the products from moisture absorption during transportation and storage. ea ch bag contains a desiccant. floor life floor life (time between soldering and removing from mbb) must not exceed the time indicated on mbb label: floor life: 4 weeks conditions: t amb < 30 c, rh < 60 % moisture sensitivity leve l 2a, acc. to j-std-020. drying in case of moisture absorpt ion devices should be baked before soldering. conditions see j-std-020 or label. devices taped on reel dry using recommended conditions 192 h at 40 c (+ 5 c), rh < 5 %. package dimensions in millimeters: vemd2000 0 50 100 150 200 250 300 0 50 100 150 200 250 300 time (s) temperat u re (c) 240 c 245 c max. 260 c max. 120 s max. 100 s 217 c max. 30 s max. ramp u p 3 c/s max. ramp do w n 6 c/s 19 8 41 255 c 2.2 5. 8 0.2 2.77 0.2 2.3 0.2 cathode 0.5 0.05 0.1 0.254 1.1 0.1 anode 0.4 2.2 0.19 0.3 1.6 0.4 ? 1. 8 0.1 2.3 0.2 specifications according to di n technical dra w ings n ot indicated tolerances 0.1 dra w ing- n o.: 6.544-5391.02-4 iss u e: 1; 26.09.0 8 exposed copper 0.75 6.7 1.7 ? 2.3 0.1 solder pad proposal acc. ipc 7351 21517 z z 20:1 pin id
document number: 81962 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 23-jul-09 5 VEMD2000X01, vemd2020x01 silicon pin photodiode vishay semiconductors package dimensions in millimeters: vemd2020 2.2 4.2 0.2 2.77 0.2 0.05 0.254 0.6 2.2 0.19 0.3 1.6 0.4 ? 1. 8 specifications according to di n technical dra w ings n ot indicated tolerances 0.1 dra w ing- n o.: 6.544-53 8 3.02-4 iss u e: 3; 26.09.0 8 exposed copper 0.75 2.45 5.15 solder pad proposal acc. ipc 7351 214 88 x x 20:1 cathode anode 0.4 2.3 0.2 2.3 0.2 0.5 pin id
www.vishay.com for technical questions, contact: detectortechsupport@vishay.com document number: 81962 6 rev. 1.1, 23-jul-09 VEMD2000X01, vemd2020x01 vishay semiconductors silicon pin photodiode taping and reel dimensions in millimeters : vemd2000 iss u e: x; 29.04.09 dra w ing- n o.: 9. 8 00-5100.01-4 leader and trailer tape: parts mo u nted empty (400 mm min.) empty (160 mm min.) direction of p u lling o u t unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 la b el posted here coming o u t from reel tape position x ? 1 3 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0 . 1 4 0.1 ? 1.55 0.05 3.05 0.1 21572 technical dra w ings according to di n specifications terminal position in tape de v ice lead i lead ii v emd2000 v smb2000 cathode anode v emt2000 v emt2500 collector emitter
document number: 81962 for technical questions, contact: detectortechsupport@vishay.com www.vishay.com rev. 1.1, 23-jul-09 7 VEMD2000X01, vemd2020x01 silicon pin photodiode vishay semiconductors taping and reel dimensions in millimeters : vemd2020 dra w ing- n o.: 9. 8 00-5091.01-4 leader and trailer tape: parts mo u nted empty (400 mm min.) empty (160 mm min.) direction of p u lling o u t unreel direction ? 62 0.5 ? 330 1 reel 2 . 5 0.5 la b el posted here coming o u t from reel tape position x ? 13 0.5 12.4 1.5 x 2:1 i ii 6000 pcs/reel 12 0.3 5.5 0.05 1.75 0.1 2 0.05 4 0.1 4 0.1 ? 1.55 0.05 3.05 0.1 terminal position in tape 21571 technical dra w ings according to di n specifications iss u e: x; 29.04.09 de v ice lead i lead ii v smb2020 v emd2020 cathode anode v emt2020 v emt2520 collector emitter
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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